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【简答题】
一正方形半导体样品,边长 1mm ,厚度为 0.1mm ,用能量为 3eV ,光强为 0.96mW/cm 2 的光照射在该正方形表面,其量子效率为 1 ,生空穴全部被陷而不能运动,电子寿命 τ n =10 -3 s ,电子迁移率 μ n =100cm 2 /V·s ,光照全部被半导体吸收,求:样品光电导率及光电导。
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