已知某 MOS 管的衬底是 P 型半导体,且仅当栅源电压大于开启电压时才能形成导电沟道,此场效应管为( )。
A.
耗尽型 NMOS 管
B.
增强型 NMOS 管
C.
耗尽型 PMOS 管
D.
增强型 PMOS 管
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